ransistors serve the purpose of either amplification or switching in most electronic circuits. There are mainly two types of transistors – BJTs (Bipolar Junction Transistors) and FETs (Field Effect Transistors). A BJT is a semiconductor device made up of two p-n junctions connected back-to-back. It can have two types of configurations – PNP or NPN, depending on the doping concentrations. Usually, Silicon is used as a substrate inside a BJT and it is doped according to the voltage and current requirements. A BJT has three terminals – base, emitter and collector. FETs also have three terminals like BJTs but they are made using just one type of material as the main substrate i.e. either p-type or n-type. The three terminals are called gate, drain and source.
Subcategories
T0006
Product Category: Bipolar Transistor, NPN.
20x 2N2222 NPN 40V 800mA 300MHz transistor features:
- Package / Case: TO-92
- Quantity: 20 units
- Collector-base voltage VCBO: 75V
- Collector-emitter voltage VCEO: 40V
- VEBO emitter-base voltage: 6V
- Continuous collector current: 600mA
- DC MAX collector current: 800mA
- Maximum power dissipation: 1.6W
T0011
T0023
Standard Triac BTA06-600B TO-220 6A 600V STM BTA06 features:
- Maximum G Door Trip Current: 100mA
- Repetitive Peak Reverse Voltage: 600V
- Nominal Suppression Current: 63A
- Maximum Door Trip Voltage: 1.5V
T0043
Product Category: Bipolar Transistor, NPN.
25x BC547B NPN 50V 100mA transistor 0.1A TO-92 features:
- Package / Case: TO-92
- Quantity: 25 units
- Collector-base voltage VCBO: 50V
- Collector-emitter voltage VCEO: 45V
- VEBO emitter-base voltage: 6V
- Continuous collector current: 100mA
- DC MAX collector current: 200mA
- Maximum power dissipation: 500mW
T0044
Product Category: Bipolar Transistor, PNP
25x BC557B 50V PNP Transistor 100mA 0.1A TO-92 features:
- Package / Case: TO-92
- Quantity: 25 units
- Collector-base voltage VCBO: 50V
- Collector-emitter voltage VCEO: 45V
- VEBO emitter-base voltage: 6V
- Continuous collector current: 100mA
- DC MAX collector current: 200mA
- Maximum power dissipation: 500mW
T0070
TIP120 Low voltage Darlington transistor NPN 60V 5A with collector-emitter saturation pack 5ps features:
- Package / Case: TIP120 TO-220
- Manufacturer: ST Microelectronics
- VCBO collector-base voltage: 60V
- VCEO collector-emitter voltage: 60V
- VEBO emitter-base voltage: 5V
- Collector continuous current: 5A
- DC MAX collector current: 8A
- Maximum power dissipation: 65W if T <= 25ºC
- Storage temperature: -65ºC to + 150ºC
- Maximum operating junction temperature: + 150ºC
T0074
BD137 Plastic Medium-Power Silicon NPN Transistors pack 5ps features:
Material: Silicon Polarity: N-P-N Encapsulated: TO 126 Audio amplifier, driver
VCBO collector-base voltage: 60V VCEO collector-emitter voltage: 60V VEBO emitter-base voltage: 5V Collector continuous current: 1.5A Typical gain of direct current. hfe: 40-160
Maximum power dissipation: 12.5 Watt if T <= 25ºC Working frequency: 250 MHz
Typical gain of direct current. hfe: 40-160
T0075
BD139 Plastic Medium-Power Silicon NPN Transistors pack 5ps features:
Material: Silicon Polarity: N-P-N Encapsulated: TO 126 Audio amplifier, driver
VCBO collector-base voltage: 60V VCEO collector-emitter voltage: 60V VEBO emitter-base voltage: 5V Collector continuous current: 1.5A Typical gain of direct current. hfe: 40-160
Maximum power dissipation: 12.5 Watt if T <= 25ºC Working frequency: 250 MHz
Typical gain of direct current. hfe: 40-160
T0069
Heat sink for transistors with TO-220 / TIP120 box
Transistor heat sink with TO-220/TIP120 box features:
Aluminum heatsink:
- Dimensions: 25x15x10mm
