Transistor S8050 PNP TO-92
  • Transistor S8050 PNP TO-92

Transistor S8050 PNP TO-92

T0083

Bipolar transistor, PNP type (i.e. positive-negative-positive), encapsulated in TO-92 type housing. See product chart for more technical information.

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Description of Transistor S8050 PNP TO-92

Bipolar transistor, PNP type (i.e. positive-negative-positive), encapsulated in TO-92 type housing. See product chart for more technical information.

The S8050 is an NPN transistor, so the collector and emitter will be left open (reverse polarized) when the base pin is held in the ground and closed (forward polarized) when a signal is provided to the base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor, normally S8050. As it is very high, it is normally used for amplification purposes.

When this transistor is totally biased, it can allow a maximum of 700mA to flow through the collector and transmitter. This stage is called the Saturation Region and the typical voltage allowed through the Collector-Emitter (VCE) or the Collector-Base (VCB) could be 20V and 30V respectively. When the base current is removed the transistor is completely shut down, this stage is called the Cut-off Region

Characteristic of Transistor S8050 PNP TO-92:

  • Low voltage, high current NPN transistor
  • Small signal transistor
  • Maximum power: 2 watts
  • The maximum DC gain (hFE) is 400
  • The direct current of the collector (IC) is 700mA
  • The voltage of the base emitter (VBE) is 5V
  • The voltage of the Collector-Emitter (VCE) is 20V
  • The collector base voltage (VCB) is 30V
  • High Used in push-pull configuration in class B amplifiers.

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