CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit
  • CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit
  • CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit

CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit

CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit features:
  - Blister: DIP14
- Number of pins: 14
- Step between pins: 2.54 mm
- Manufacturer: Texas Instrument - High level input voltage V (IH): 3.5 - 11 VDC
- Low level input voltage V (IL): 1.5 - 4 VDC
- High level output voltage V (OH): 5 - 15 VDC
- Low level output voltage V (OL): 0.05 VDC - High level output current I (OH): -6.8 - -1 mA
- Low level I output current (OL): 1 - 6.8 mA
- Inactive current of device I (DD): 0.25 - 5 μA
- Input current I (IN): ± 0.1 μA - Operating temperature: -55 ° C to 125 ° C
- Storage temperature: -65 ° C to 150 ° C
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CD4011BE DIP14 Quadruple Input Logic Gates CMOS NAND Integrated Circuit features:


  - Blister: DIP14
- Number of pins: 14
- Step between pins: 2.54 mm
- Manufacturer: Texas Instrument - High level input voltage V (IH): 3.5 - 11 VDC
- Low level input voltage V (IL): 1.5 - 4 VDC
- High level output voltage V (OH): 5 - 15 VDC
- Low level output voltage V (OL): 0.05 VDC - High level output current I (OH): -6.8 - -1 mA
- Low level I output current (OL): 1 - 6.8 mA
- Inactive current of device I (DD): 0.25 - 5 μA
- Input current I (IN): ± 0.1 μA - Operating temperature: -55 ° C to 125 ° C
- Storage temperature: -65 ° C to 150 ° C

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