74HC00N DIP14 Input NAND Gate NXP Integrated Circuit
  • 74HC00N DIP14 Input NAND Gate NXP Integrated Circuit
  • 74HC00N DIP14 Input NAND Gate NXP Integrated Circuit

74HC00N DIP14 Input NAND Gate NXP Integrated Circuit

T0050

74HC00N DIP14 Input NAND Gate NXP Integrated Circuit features:
- Blister: DIP14
- Number of pins: 14
- Step between pins: 2.54 mm
- Manufacturer: NXP - Input voltage VCC: 2 - 6 VDC
- High level input voltage V (IH): 1.2 - 3.2 VDC
- Low level input voltage V (IL): 0.8 - 2.8 VDC
- Input voltage V (I): 0 - 6 VDC
- Output voltage V (O): 0 - 6 VDC
- High level output voltage V (OH): 2 - 6 VDC
- Low level output voltage V (OL): 0 - 0.16 VDC - Leakage current I (I): ± 1 μA
- Supply current I (CC): 40 μA - Operating temperature: -40 ° C to 125 °C
- Storage temperature: -40 ° C to 125 °C

NXP
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74HC00N DIP14 Input NAND Gate NXP Integrated Circuit features:


- Blister: DIP14
- Number of pins: 14
- Step between pins: 2.54 mm
- Manufacturer: NXP - Input voltage VCC: 2 - 6 VDC
- High level input voltage V (IH): 1.2 - 3.2 VDC
- Low level input voltage V (IL): 0.8 - 2.8 VDC
- Input voltage V (I): 0 - 6 VDC
- Output voltage V (O): 0 - 6 VDC
- High level output voltage V (OH): 2 - 6 VDC
- Low level output voltage V (OL): 0 - 0.16 VDC - Leakage current I (I): ± 1 μA
- Supply current I (CC): 40 μA - Operating temperature: -40 ° C to 125 °C
- Storage temperature: -40 ° C to 125 °C

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- Blister: DIP14
- Number of pins: 14
- Step between pins: 2.54 mm
- Manufacturer: NXP - Input voltage VCC: 2 - 6 VDC
- High level input voltage V (IH): 1.2 - 4.2 VDC
- Low level input voltage V (IL): 0.5 - 1.8 VDC
- Input voltage V (I): 0 - 6 VDC
- Output voltage V (O): 0 - 6 VDC
- High level output voltage V (OH): 1.9 - 5.9 VDC
- Low level output voltage V (OL): 0.1 - 0.33 VDC - Leakage current I (I): ± 1000 nA
- Power supply current I (DC): 20 μA - Operating temperature: -40 ° C to 85 ° C
- Storage temperature: -65 ° C to 150 ° C

T0051

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